| PART |
Description |
Maker |
| NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| LTC3718 |
Low Input Voltage DC/DC Controller for DDR Memory Termination
|
Linear
|
| LTC3718 |
Low Input Voltage, DC/DC Controller for DDR/QDR Memory Termination
|
Linear Technology
|
| LTC3718 LTC3718EG |
Low Input Voltage DC/DC Controller for DDR/QDR Memory Termination
|
Linear Technology
|
| RT9210 RT9210GC RT9210GS RT9210PC RT9210PS |
Dual 5V Synchronous Buck DC-DC PWM Controller for DDR Memory VDDQ and VTT Termination
|
Richtek Technology Corporation
|
| LTC3717-1 LTC3717EUH-1 |
Wide Operating Range, No RSENSE TM Step-Down Controller for DDR/QDR Memory Termination
|
Linear Technology
|
| LTC3717 3717F |
Wide Operating Range, No Rsense Step-Down Controller for DDR Memory Termination
From old datasheet system
|
Linear
|
| CM3107-00SB CM3107-00SH CM3107-00SM CM3107-00SN CM |
2 Amp Source/ Sink Bus Termination Regulator for DDR Memory and Front Side Bus Applications
2.0A Source/Sink Bus Termination Regulator
|
California Micro Device...
California Micro Devices Corp
|
| BR34E02NUX-WE2 BR34E02FVT-WTR BR34E02FVT-WE2 |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| MAX8554 MAX8553 MAX8553EEE MAX8554EEE X8553-MAX855 |
4.5V to 28V Input. Synchronous PWM Buck Controllers for DDR Termination and Point-of-Load Applications
4.5V to 28V Input, Synchronous PWM Buck Controllers for DDR Termination and Point-of-Load Applications
Quadruple Positive-NAND Gates With Schmitt-trigger Inputs 14-CFP -55 to 125
|
Maxim Integrated Products, Inc.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TJ2996D TJ2996DP |
DDR Termination Regulator
|
HTC Korea TAEJIN Technology Co.
|
